SemiQ(40)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Package | Series | Datasheet | Mfr | Base Product Number | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Reverse Recovery Time (trr) | Power Dissipation (Max) | Product Status | Technology | FET Type | Speed | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Capacitance @ Vr, F | Voltage - Peak Reverse (Max) | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Diode Configuration | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GHXS100B065S-D3 | SemiQ | 47.9100 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | SemiQ | GHXS100 | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 0 ns | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 650 V | 1.65 V @ 100 A | 250 µA @ 650 V | -55°C ~ 175°C | 2 Independent | 193A (DC) | ||||||||||||||||||
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GHXS100B120S-D3 | SemiQ | 82.3100 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | SemiQ | GHXS100 | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 0 ns | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 1200 V | 1.7 V @ 100 A | 200 µA @ 1200 V | -55°C ~ 175°C | 2 Independent | 198A (DC) | ||||||||||||||||||
 |
GP2T080A120U | SemiQ | 12.4400 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | SemiQ | GP2T080A | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 188W (Tc) | Active | SiCFET (Silicon Carbide) | N-Channel | 1377 pF @ 1000 V | 1200 V | - | 35A (Tc) | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | 20V | +25V, -10V | ||||||||||||||
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GP3D005A170B | SemiQ | 5.8700 |
Min: 1 Mult: 1 |
0.00000000 | Tube | Amp+™ | download | SemiQ | GP3D005 | Through Hole | TO-247-2 | TO-247-2 | 0 ns | Active | No Recovery Time > 500mA (Io) | 347pF @ 1V, 1MHz | Silicon Carbide Schottky | 1700 V | 21A | 1.65 V @ 5 A | 20 µA @ 1700 V | -55°C ~ 175°C | ||||||||||||||||||
 |
GP3D020A065U | SemiQ | 6.6200 |
Min: 1 Mult: 1 |
0.00000000 | Tube | Amp+™ | download | SemiQ | GP3D020 | Through Hole | TO-247-3 | TO-247-3 | 0 ns | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 650 V | 1.6 V @ 10 A | 25 µA @ 650 V | -55°C ~ 175°C | 1 Pair Common Cathode | 10A | ||||||||||||||||||
|
GHXS010A060S-D3 | SemiQ | 20.4600 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | SemiQ | GHXS010 | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Active | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | 600 V | 1.7 V @ 10 A | 100 µA @ 600 V | -55°C ~ 175°C | 2 Independent | 10A | |||||||||||||||||||
|
GP3D030A120U | SemiQ | 16.4000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | Amp+™ | download | SemiQ | GP3D030 | Through Hole | TO-247-3 | TO-247-3 | 0 ns | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 1200 V | 1.6 V @ 15 A | 30 µA @ 1.2 kV | -55°C ~ 175°C | 1 Pair Common Cathode | 15A | ||||||||||||||||||
|
GHXS015A120S-D3 | SemiQ | 39.8900 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | SemiQ | GHXS015 | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Active | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | 1200 V | 1.7 V @ 15 A | 100 µA @ 1200 V | -55°C ~ 175°C | 2 Independent | 15A | |||||||||||||||||||
|
GSXD080A004S1-D3 | SemiQ | 39.3400 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | SemiQ | GSXD080 | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Active | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45 V | 700 mV @ 80 A | 1 mA @ 45 V | -40°C ~ 150°C | 2 Independent | 80A | |||||||||||||||||||
|
GHXS020A060S-D3 | SemiQ | 37.6400 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | SemiQ | GHXS020 | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Active | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | 600 V | 1.7 V @ 20 A | 200 µA @ 600 V | -55°C ~ 175°C | 2 Independent | 20A | |||||||||||||||||||
|
GSXD160A010S1-D3 | SemiQ | 46.7100 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | SemiQ | GSXD160 | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Active | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100 V | 840 mV @ 160 A | 1 mA @ 100 V | -40°C ~ 150°C | 2 Independent | 160A | |||||||||||||||||||
|
GHXS030A060S-D1E | SemiQ | 67.1600 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | SemiQ | GHXS030 | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Active | Silicon Carbide Schottky | 600 V | Single Phase | 30 A | 1.7 V @ 30 A | 100 µA @ 600 V | ||||||||||||||||||||
|
GSXF100A120S1-D3 | SemiQ | 40.8700 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | SemiQ | GSXF100 | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 125 ns | Active | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1200 V | 2.35 V @ 100 A | 25 µA @ 1200 V | -55°C ~ 175°C | 2 Independent | 100A | ||||||||||||||||||
|
GHXS030A120S-D1E | SemiQ | 106.8000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | SemiQ | GHXS030 | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Active | Silicon Carbide Schottky | 1.2 kV | Single Phase | 30 A | 1.7 V @ 30 A | 200 µA @ 1200 V | ||||||||||||||||||||
|
GHXS030A120S-D3 | SemiQ | 67.8600 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | SemiQ | GHXS030 | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 1200 V | 1.7 V @ 30 A | 200 µA @ 1200 V | -55°C ~ 175°C | 2 Independent | 30A |
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